Emission Wavelength

λ_R

850nm

Threshold current

I_TH

1

mA

Output Power

P_opt

0.5

1

mW

Threshold Voltage

U_TH

1.8

V

Driving Current

IOP

3

mA

Popt = 0.5mW

Laser voltage

UOP

3

V

Popt = 0.5 mW

Electro optic conversion rate

ηWP

12

%

Popt = 0.5 mW

Slope efficiency

ηS

0.3

W/A

Rise and Fall time

T_r   /T_f

90/120

Psec

Differential series resistance

RS

100

200

Ω

Popt = 0.5 mW

3dB bandwidth

ν3dB

0.10

2.5

GHz

Popt = 0.5 mW

Due to   ESD protection diode

Relative intensity noise

RIN

-130

-120

dB/Hz

Popt = 0.3 mW @ 1   GHz

Wavelength tuning over current

0.6

nm/mA

Wavelength tuning over temperature

0.06

nm/K

Thermal resistance (VCSEL chip)

R_thermal

3

5

K/mW

Side mode supression

35

dB

I = 2 mA

Beam divergence

θ

10

25

°

Popt = 0.5mW, full width 1/e2

Spectral Width

100

MHz

Popt = 0.5 mW

Tec   Current

mA

-150(Heating)

+300(Cooling)

Proper   Heart Sink Required

NTC Thermistor Resistance

KΩ

9.5

10.0

10.5

T=25℃@10 KΩ

NTC Thermistor Resistance

KΩ

10/exp{3892-(1/289K-I/T_OP)}