Central wavelength 850nm; with TEC, Narrow linewidth, Output power 2mW, Tolerance ±10nm, TO46
| Part Number : PL-VCSEL-0850-1-A82-TO46 |
| Unit Price : USD [Please inquire] |
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The PL-VCSEL-0850-0-A82-TO46 850±10nm VCSEL is a vertical emitting MOVPE grown GaAsP/AlGaAs Single Mode diode laser. The chips are mounted in TO46 can. Wavelength tuning can be achieved via laser current. package with TEC and PD Built in(Optional). It is special designed for FTIR Application. Good Narrow linewidth and low cost made it a great low cost choice for FTIR Application.
Condition:TO P = 20°C, IO P = 2.0 mA unless otherwise stated (TO P = chip backside temperature, controlled by the TEC)
T = 20°C unless otherwise stated
Parameter | Symbol | Units | Min | Typ | Max | Test conditions |
Emission wavelength | λR | nm | 830 | 870 | POP = 2 mW | |
Threshold current | ITH | mA | 2 | |||
Laser current | IOP | mA | 6 | Popt. = 2 mW | ||
Laser voltage | UOP | V | 2.6 | Popt. = 2 mW | ||
Slope efficiency | ηS | W/A | 0.5 | 1 | ||
Output power | Popt | mW | 2 | 2.5 | IOP = 6 mA | |
Differential series resistance | RS | Ω | 50 | 200 | Popt. = 2 mW | |
Beam divergence | Θ | ° | 10 | 20 | Popt. = 2 mW, full width 1/e² | |
Side mode suppression ratio | SMSR | dB | 10 | Popt. = 2 mW | ||
ESD damage threshold | V | 2000* | human body model | |||
Wavelength tuning over temperature | nm/K | 0.06 |
*for TO package with integrated Z-diode
Spectrum

L-I Curve(T@25°C)
