parameters

Symbol

unit

Test   conditions

min

typical

max

Reverse breakdown voltage

V_BR

V

22℃±3℃ ，ID =10μA

60

80

90

Reponsivity

R_e

A/W

22℃±3℃ ，

λ =1550nm ，

M =1

0.8

0.85

Dark current

I_D

nA

22℃±3℃ ，M =10

0.1

0.3

Capacitance

C

PF

22℃±3℃ ，M =10， f=1MHz

0.25

Breakdown voltage temperature coefficient

η

V/K

-40℃ ~80℃，ID =10μA

0.15

Single Photon Detection Efficiency (PDE)

%

-45℃, λ =1550nm,0.1ph/pulse

Poisson   distribution single photon source

20

Dack count rate (DCR)

kHz

-45℃, 1ns gate   width，2MHz Gated repetition   frequency，

1MHz Optical repetition frequency，PDE=20%

20*

After pulse probability (APP)

-45℃, 1ns gate width，2MHz Gated repetition frequency，

1MHz Optical repetition frequency，PDE=20%

1× 10^-3

Time jitter (Tj)

ps

-45℃, 1ns gate width ，2MHz Gated repetition frequency，PDE=20%

100