1330nm Ultra High power DFB Laser diode     


The PL-HDFB-1330-A-A81 1330nm ultra high DFB Laser diod module made by LD-PD is a cost effective, highly coherent laser source. The DFB laser diode chip is packaged in an industry standard hermetically sealed 14 pin butterfly package with TEC and PD Built in.



Product model


Name Model Price
1330nm PM Ultra High power DFB Laser diode   [PDF]  [RFQ]

PL-HDFB-1330-B-A81-PA
[Please inquire]
1330nm SM Ultra High power DFB Laser diode   [PDF]  [RFQ]

PL-HDFB-1330-B-A81-SA
[Please inquire]

Parameter


Features

● Narrow Linewidth < 2MHz

● Excellent wavelength control and stability

● Industry Standard 14 pin Butterfly package

● Mode-Hop free tuning

● Excellant reliability

● Customer specific wavelengths available

Laser Specifications

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min

Typ

Max

Unit

Centre Wavelength

λ

1329

1330

1331

nm

Side Mode Suppression Ratio

SMSR

30

40


dB

Threshold Current

Ith


40

100

mA

Operating Current

Iop


800

1100

mA

Chip output Power

Pf


250

304

mW

Quantum Efficiency

η

0.08

0.287


mW/mA

Current Tuning Coefficient

∆λ/∆I


0.015


nm/mA

Temperature Tuning Coefficient

∆λ/∆T


0.12


nm/K

Forward Voltage

Vf


1.8

3

V

Thermistor Resistance

RT

9.5

10

10.5

KΩ

Polarization Extinction RatioPER≥1830.3
dB

Thermistor Temp. Coefficient



-4.4


%/°C

Connector

FC/APC


Spectrum

1330nm DFB Laser.png


L-I Curve

1330nm DFB Laser1.png

Tuning characteristics


1330nm DFB Laser2.png


Typical Linewidth Measurement(CW,223.935 kHz@25deg,300mA)

1330nm DFB Laser3.png


Beam Quality Profiler (2D/3D) 

D)XRNI6(B736%L%HB68S3.jpg    

2D 


 ZUYY5)4Z332N5V9_ZJ`JF.png

3D


Polarization Extinction Ratio Test(PM Version)

1330nm DFB Laser4.png


Package Size

1330nm DFB Laser5.png

Pin definition

Schematic Diagram (Top View)

1455.3.jpg

Pin Connection

PIN#

Function

PIN#

Function

1

Thermistor

8

Case Ground

2

Thermistor

9

Case Ground

3

LD(-)

10

NC

4

Detector (+)

11

LD(+)

5

Detector (-)

12

LD (–), RF 

6

TEC (+)

13

LD (+)

7

TEC (–)

14

NC


Absolute Maximum Ratings

Item

Unit

Min

Typ

Max

Case Temperature

  ℃

-5

25

70

Chip Temperature

℃

10

25

40

Operating Current

mA

0

800

1100

Forward Voltage

V

0.8

1.8

3

TEC Current

mA

-

-

100

Reverse Voltage(LD)

V

-

-

2.0

Reverse Voltage(PD)

V

-

-

20


Application

● Tunable diode laser absorption spectroscopy

● Gas Monitoring

Ordering Info

PL-HDFB-□□□□-☆-A8▽- XX

□□□□: Wavelength

1230: 1230nm

1308: 1308nm

1567: 1567nm

1572: 1572nm

*****

1645: 1645nm

☆: Output Power

A: 200mW

B: 300mW

▽: Wavelength Tolerance

1: ±1nm

2: ±2nm

XX: Fiber and Connector Type

SA=SMF-28E+ FC/APC

SP=SMF-28E+ FC/PC

PP=PM Fiber+ FC/PC

PA=PM Fiber+ FC/APC

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