C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes are high-performance InGaAs photodetectors designed for optical power monitoring in fiber-optic communication systems. Featuring high responsivity, low dark current, low back reflection, and stable performance, these photodiodes support C-band and L-band applications. With hermetically sealed packaging, flexible fiber configurations, and a wide operating temperature range of −40°C to +85°C, they provide reliable optical detection solutions for EDFA, DWDM, PON, and high-speed optical networks.
| Name | Model | Description | Price |
|---|
● High Responsivity
● Low Dark Current
● Low Back Reflection
● High-Speed Performance
● Flexible Packaging
Test conditions: Temperature = 25°C, V PD = –5 V and wavelength = 1550 nm, unless otherwise noted.
Parameters | EPM 635 | EPM 635-75 | |
Active diameter | Typical | 300 μm | 60 μm |
Responsivity | Minimum | 0.85 A/W | 0.85 A/W |
Back reflection | Minimum | −40 dB | −40 dB |
Dark current Standard leakage Low leakage | Minimum~Maximum | 0.6 nA~0.09 nA | / 0.08 nA |
Capacitance1 | Typical Maximum | 6.0 pF 7.0 pF | 0.9 pF 1.4 pF |
Bandwidth2 | Typical | 300 MHz | 2000 MHz |
Maximum Ratings | |||
Forward current | Maximum | 10 mA | 10 mA |
Reverse current | Maximum | 10 mA | 10 mA |
Reverse voltage | Maximum | 25 V | 25 V |
Power dissipation | Maximum | 100 mW | 100 mW |
Operating temperature | −40 to 85°C | −40 to 85°C | |
Storage temperature | −40 to 85°C | −40 to 85°C |
1. Measured with leads trimmed or referenced to 3 mm length maximum.
2. −3 dB point into a 50 Ω load.
Parameters | EPM 605 | EPM 606 | |
Active diameter | Typical | 60 μm | 60 μm |
Responsivity λ = 980 nm λ = 1310 nm λ = 1550 nm λ = 1625 nm | Minimum | / 0.80 A/W 0.85 A/W / | / / 0.85 A/W 0.80 A/W |
Back reflection λ = 980 nm λ = 1310 nm λ = 1550 nm λ = 1625 nm | Minimum | / / −40 dB / | / / / −40 dB |
Dark currentStandard leakage Low leakage | Minimum Maximum | 0.6 nA~0.08 nA | 0.6 nA~0.08 nA |
Capacitance1 | Maximum | 0.75 pF | 0.75 pF |
Bandwidth2 | Typical | 2.0 GHz | 2.0 GHz |
PDL λ = 980 nm λ = 1310 nm λ = 1550 nm λ = 1625 nm | Typical | / 0.1 dB 0.1 dB / | / / 0.1 dB 0.1 dB |
Maximum Ratings | |||
Forward current3 | Maximum | 10 mA | 10 mA |
Reverse current4 | Maximum | 10 mA | 10 mA |
Reverse voltage | Maximum | 25 V | 25 V |
Power dissipation | Maximum | 100 mW | 100 mW |
Operating temperature | −40 to 85°C | −40 to 85°C | |
Storage temperature | −40 to 85°C | −40 to 85°C | |
Soldering temperature | Maximum | 250°C | 250°C |
Note:
1. Measured with case grounded.
2. −3 dB point into a 50 Ω load.
3. Current that may damage device under forward bias.
4. Current that may damage device under reverse bias.
Typical Spectral Response (23°C)

Dark Current vs. Reverse Bias

Capacitance vs. Reverse Bias (23°C)(EPM 605/606)

Optical Response Nonlinearity (typical, –5 V bias)

PDL vs. Temperature (EPM 606)

Responsivity vs. Temperature (EPM 606)

Responsivity vs. Wavelength, Temperature (EPM 605)

PDL vs. Wavelength, Temperature (EPM 605)

PDL vs. Temperature (EPM 605)

Responsivity vs. Temperature (EPM 605)

Equivalent Circuit for EPM 6xx-Series

Model | Rs | Cp |
EPM 605 | 60 μm | 60 μm |
EPM 606 | 5 Ω | 0.55 pF |
EPM 613 | 5 Ω | 0.75 pF |
EPM 650 | 6 Ω | 1.00 pF |
Specifications in mm unless otherwise noted.


● C-Band and L-Band Monitoring
● EDFA Systems
● DWDM Networks
● High-Speed Optical Networks
● Passive Optical Networks (PON)
