Operating Wavelength 850nm; Operating Bandwidth 10GHz; RF Return Loss -10dB; Insertion Loss 3.5dB
| Part Number : PM-850-10G-P-P-FA-FA(TF) |
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The PM-850-10G-P-P-FA-FA(TF) is a high-performance, compact electro-optic phase modulator based on advanced Thin-Film Lithium Niobate (TFLN) technology. Operating at the 850nm wavelength band, it features a 3dB electro-optic bandwidth of 10GHz, exceptionally low insertion loss, low half-wave voltage (Vpi less than 4 V), and excellent polarization extinction ratio. This modulator is ideally suited for optical fiber communications, microwave photonics, and quantum optical systems.
Technical Specifications
All specifications are measured at 25deg unless otherwise noted.
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
Electro-Optic Bandwidth | S21 | From 2GHz start frequency | 10 | 12 | — | GHz |
RF Return Loss | S11 | Up to 10GHz | — | — | -10 | dB |
Operating Wavelength | λ | Optimized center wavelength | 750 | 850 | 930 | nm |
Optical Insertion Loss | IL | 850nm CW laser, 0 dBm input | — | 3.5 | 4.0 | dB |
Fiber Polarization Crosstalk | PER | PMF Extinction Ratio | — | — | -25 | dB |
RF Half-Wave Voltage | Vpi | Low-frequency reference (f = 50kHz) | — | 3.5 | 4.0 | V |

Typical S21 Frequency Response
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
Parameter | Symbol | Rating | Unit |
Maximum Input Optical Power | Ps,o | 100 | mW |
Maximum Input RF Power | Ps,rf | 23 | dBm |
Operating Temperature | TW | -40 to +80 | °C |
Storage Temperature | TS | -55 to +85 | °C |