The SPD65111S is a InGaAs Unit Single-Photon Detector Module,Operating wavelength 1.0μm～1.65μm ,High detection sensitivity (single-photon level detection capability),Free-running mode (adjustable operating gate width), LVTTL/TTL output, Capable of internal and external synchronous operation, Adjustable key setting parameters, Optional free-space light/FC pluggable optical interface/multi-mode fiber (62.5μm).
Characteristic parameters | Sign | Test conditions | Min. | Typ. | Max. | Unit |
Detector Specifications and Configuration Parameters |
Effective pixel diameter | d | — | — | 25 | — | μm |
Operating wavelength | λ | — | 1000 | — | 1650 | nm |
Output signal amplitude | Vout |
| 2.5 | 3.3 | 5.0 | V |
Power consumption | PDC | VIN =12.0V，Tth=-30℃±5℃ | — | 15.0 | — | W |
Input voltage | VIN | — | — | 12 | — | V |
Input current | IIN | VIN =12.0V，Tth=-30℃±5℃ |
| 1.5 | — | A |
Operating ambient temperature | TA | — | -40 | — | 55 | ℃ |
Weight | Wt | — | — | — | 300 | g |
Detector size | SC | — | 89 ×62 ×30 | mm |
Performance Parameter |
Photon Detection Efficiency | PDE | TA=25±5℃，Tth=-30℃±5℃， τ=0.8 μs±0.1 μs，λ=1550±50nm(InGaAs)，λ=1064±10nm(InGaAsP) | 10 | 15 | — | % |
Dark Count Rate (InGaAs) | DCR(PDE=10%) | — | — | 10 | kHz |
Dark Count Rate (InGaAsP) | DCR(PDE=10%) | — | — | 5 | kHz
|
After pulse Probability | APP(PDE=10%) |
| — | — | 20 | % |
Tth: InGaAs avalanche photodiode chip operating temperature. τ: Dead time. Ambient temperature for the above parameter tests: TA = 25 ± 5℃. |
Parameter Setting Range and Recommended Operating Conditions
No. | Parameters | Rated Values |
Parameter Setting Range | 1 | Detector operating temperature | -30℃~30℃, minimum step value: 0.1℃ |
| 2 | Dead time adjustment | 0.1μs～2.0μs, step value: 0.025μs |
| 3 | Avalanche voltage threshold adjustment | 50.0V～85.0V, step value: 0.1V |
| 4 | Geiger avalanche comparison voltage setting | 0.35V～1.10V, step value: 0.01V |
| 5 | Detector operating gate width and operating cycle adjustment | Operating gate width: ≥0.1μs; operating cycle: ＞0.1μs; step value: 0.01μs |
No. | Parameters | Rated Values |
Recommended Operating Conditions | 1 | Detector operating temperature | -30℃~0℃ |
| 2 | Dead time value | 0.80μs |
| 3 | Avalanche voltage threshold adjustment | See the test report for details |
| 4 | Geiger avalanche comparison voltage setting | 0.45V～0.90V |
Typical Characteristic Curves
Figure 1 InGaAs Spectral Response Characteristic Curve
Figure 2 InGaAsP Spectral Response Characteristic Curve
Quality Reliability Assurance
Implement the relevant requirements of GJB8121-2013 "General Specifications for Semiconductor Optoelectronic Assemblies"
SPD65111S InGaAs Unit Single-Photon Detector Module.pdf
