Bent-waveguide 60GHz electro-optic intensity modulator chip


Operating Wavelength 1260-1360nm; Operating Bandwidth 60GHz

Part Number  :  TFLNB60G
Unit Price  :  USD [Please inquire]
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Inventory quantity   :   [Please inquire]
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UFP offers Thin Film Lithium Niobate (TFLN) modulator chips in different formats and data rate, including DR8 and 2 x FR4 @ 100 Gbps/lane for 800 Gbps applications and DR4 @ 400 Gbps/lane for 1.6 Tbps applications. With expereince and know-how, AFR engineers are available to customize our products to meet customers' specific requirements.

Product Specifications (Test conditions: 25 °C, unless otherwise specified)

Parameters

Symbol

Test condition

Min.

Typ.

Max.

Unit

Operating Wavelength

λ


1310(O band)

nm

Insertion Loss

IL

1310nm 0dBm CW


4

4.5

dB

RF Half-Wave Voltage

1310nm CW  mod=50kHz


3.3

3.5

V

3 dB Bandwidth

S21


40/60

GHz

Extinction Ratio (ER)

ER


20



dB

RF Return Loss

S11




-10

dB

Thermal Tuning Resistance

R



80


Ω

Thermal Tuning Pπ



50


mW

Input/Output Waveguide Mode Field

MFD


4/9

μm


Maximum Absolute Ratings

Parameter Name

Symbol

Rated Value

Unit

Input Optical Power

Ps,o

23

dBm

Input Optical Return Loss

Ps,rf

23

dBm

Thermoelectric Cooler Voltage

VH

±8

V

Operating Temperature

TW

-40 ~ +85

°C

Storage Temperature

TS

-40 ~ +85

°C


Related

Name Model Price
Bent-waveguide 40GHz electro-optic intensity modulator chip [PDF]

TFLNB40G

[Please inquire]

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