Silicon Avalanche Photodetectors (APDs) are designed to provide greater sensitivity and lower noise than standard PIN detectors, making them ideal for applications with low optical power levels. In addition to our standard APDs, versions with variable gain (i.e., M factor) and/or temperature compensation are also available.
Specification
PN# | APDI-0.8/1.7um-1mm-AG8 | APDI-0.8/1.7um-0.5mm-AG8 | APDI-0.8/1.7um-0.2mm-AG8 | APDI-0.8/1.7um-0.1mm-AG8 | APDI-0.8/1.7um-0.08mm-AG8 | APDI-0.8/1.7um-0.05mm-AG8 |
Photosensitive range | 800～ 1700nm |
Photosensitive size | φ1.0mm | Φ0.5mm | Φ0.2mm | Φ0.1mm | Φ0.08mm | Φ0.05mm |
APD bias voltage adjustment range | 0 ~ 55 V | 0 ~ 55 V | 0 ~ 55 V | 0 ~ 55 V | 0 ~ 55 V | 0 ~ 55 V |
APD gain M | 0 ~ 30 | 0 ~ 30 | 0 ~ 30 | 0 ~ 30 | 0 ~ 30 | 0 ~ 30 |
Response time constant | 5 ns | 1 ns | 300 ps | 200 ps | 300 ps | 150 ps |
Bandwidth range | DC~12MHZ |
Gain range | Hi-Z load: 1.51kV/A~4.75MV/A; 50Ω load: 0.75kV/A~2.38 MV/A |
Signal amplitude | Hi-Z load: 0～10V; 50Ω load: 0～5V |
Gain adjustment method | 1: Rotary gear adjustment: 0~70dB, 10dB per gear, 8 gears in total; 2: Single-turn potentiometer adjusts the APD's own gain; the bandwidth is inversely proportional to the gain. |
Photosensitive surface depth | 0.05" (1.2 mm) |
Detector net weight | 0.11kg |
Operating temperature | 10～40℃ |
Storage temperature | -20～ 70℃ |
Appearance size | 2.78" X 2.21" X 1.20" (70.6 mm X 56.2 mm X 30.5 mm) |
NEP | 2.67~71.7 pW/Hz1/2 |
Power supply interface | Power switch | Signal interface | Gain adjustment | Support rod interface | Optical interface |
LUMBERG RSMV3 FEMALE | Slide switch with LED indicator | BNC female socket | Single-turn potentiometer | M4 X 2 | SM1 X 1 SM0.5 X 1 |
0dB | 10dB | 20dB | 30dB |
Gain (Hi-Z) | 1.51X10³V/A | Gain (Hi-Z) | 4.75X10³V/A | Gain (Hi-Z) | 1.5X10⁴V/A | Gain (Hi-Z) | 4.75X10⁴V/A |
Gain (50Ω) | 0.75X10³V/A | Gain (50Ω) | 2.38X10³V/A | Gain (50Ω) | 0.75X10⁴V/A | Gain (50Ω) | 2.38X10⁴V/A |
Bandwidth (BW) | 12MHz | Bandwidth (BW) | 1.6MHz | Bandwidth (BW) | 1MHz | Bandwidth (BW) | 260kHz |
Noise (RMS) | 258μV | Noise (RMS) | 192μV | Noise (RMS) | 207μV | Noise (RMS) | 211μV |
Signal bias | ±8mV(Typ.),±12mV(Max)
|
40dB | 50dB | 60dB | 70dB |
Gain (Hi-Z) | 1.51X10⁵V/A | Gain (Hi-Z) | 4.75X10⁵V/A | Gain (Hi-Z) | 1.5X10⁶V/A | Gain (Hi-Z) | 4.75X10⁶V/A |
Gain (50Ω) | 0.75X10⁵V/A | Gain (50Ω) | 2.38X10⁵V/A | Gain (50Ω) | 0.75X10⁶V/A | Gain (50Ω) | 2.38X10⁶V/A |
Bandwidth (BW) | 90KHz | Bandwidth (BW) | 28KHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | 214μV | Noise (RMS) | 234μV | Noise (RMS) | 277μV | Noise (RMS) | 388μV |
Signal bias | ±8mV(Typ.),±12mV(Max) |
Eight-level quantitatively adjustable gain parameters
Note：
● For a complete list of specifications and responsivity curves, see the APDxxxC Specs tab. Data valid at 23 ± 5 °C and 45% ± 15% relative humidity (noncondensing).
● Maximum gain set at peak response wavelength, 23 ± 5 °C temperature range
Spectral response curve
Avalanche Photodetector （APD）.pdf
