Gain-chip 200mW at 905nm on Carrier


Central wavelength 905nm, Output power 200mW, COS package, ASE bandwidth 90nm, (Min qty: 5pcs)

Part Number  :  HP-GC-905-1-COS
Unit Price  :  USD [Please inquire]
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Gain-chips are critical components for building tunable diode lasers and highly stable external cavity diode lasers. Unlike standard laser diode chips, gain-chips feature deep anti-reflective (AR) coatings on one or both facets, significantly increasing the self-lasing threshold or preventing it. Common external cavity diode laser configurations include Littrow and Littman/Metcalf cavities, where diffraction gratings are used to diffract light of the desired wavelength back along the incident path, with wavelength tuning achieved by rotating the grating. An intracavity lens often collimates the expanded beam onto the grating, and the zero-order beam serves as the laser output.

Recommended Operating Point

Parameters

Value

Unit

Current

400

mA

Forward voltage

1.8

V

Heatsink temperature

25


Expected Tunability Parameters @ CW, recommended operating point, external cavity in Littman configuration with 200% feedback

Parameter

Value

Unit

Wavelength of maximum power (λmp)

920

nm

Optical output power @ λmp

200

mW

Central wavelength of tuning range

905

nm

Wavelength locking range

90

nm

Parameters

Value

Unit

Chip cavity length

1.5

mm

Reflectivity of front facet (AR-coated)

<0.001

%

Reflectivity of back facet (HR-coated)

99

%


Absoulute Maximum Ratings

Parameters

Min

Max

Unit

Reverse voltage


1

V

Forward current


600

mA

Storage temperature range (in original sealed pack)

5

50

-Operating temperature range

20

40

Typical Performance Without External Cavity @ CW, 25°C heatsink temperature


L-I-V curve

GP2.png

ASE spectrum

GP3.png


Typical Performance Without External Cavity @ CW, 25°C heatsink temperature, Littman configuration with 20% feedback, Thorlabs GR-25-1208 grating

Output power @ 920 nm

GP4.png

Optical spectrum @ 150mA (res. 0.025 nm)

GP5.png



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