Response Spectrum

λ

—

1000～1700

nm

Active Diameter

D

—

500

μm

Reverse breakdown voltage

V_BR

DC ID=100μA,Optical   Power φe=0

30

70

V

Operating voltage

V_R

Avalanche Gain M=10

0.90×VR

V

Responsivity

R_V

M=10,λ=1.55μm,pulse width

TW=100ns，Output pulse inversion

300

kV/W

Dynamic range

D_Y

M=10,λ=1.55μm

25

dB

-3dB bandwidth

BW

M=10,λ=1.55μm,pulse width TW=100ns

40

MHz

Rise/Fall time

t_r

M=10,λ=1.55μm,pulse width TW=100ns

7

ns

Noise Equivalent Power

NEP

M=10,f=100kHz,△f=1.0Hz

—

0.16

1

pW/ √Hz

Output impedance

R_O

V_CC/V_EE=±5V

—

50

Ω

Output Voltage Swing

V_O

-

0.7

V

Offset Voltage

V_offset

-

0

V

Positive Supply Current

I_CC

V_CC/V_EE=±5V

—

30

mA

Negative Supply Current

I_EE

—

10

mA

Temperature coefficient

σ

-55℃~+85℃

0.12

V/℃

Concentricity

△D

-

50

μm

 APD   voltage supply

V_R

VBR

V

Operating temperature

T_C

-45～+85

℃

 Storage temperature

T_STG

-55～+100

℃

Maximum optical input power

P_in

100

mW

 Module mains voltage

V_cc/V_EE

±6

V

 Power dissipation

P_w

250

mW

Soldering temperature(time)

-

300（10s）

℃